Paper
8 March 2014 Multi-wavelength light emission from three-dimensional AlGaN quantum wells fabricated on facet structures
Ken Kataoka, Masanori Yamaguchi, Kensuke Fukushima, Mitsuru Funato, Yoichi Kawakami
Author Affiliations +
Abstract
Faceted three-dimensional (3D) AlGaN/AlN multiple quantum wells (MQWs) with semipolar {1 ̄101} and polar (0001) planes are fabricated by a regrowth technique based on metalorganic vapor phase epitaxy (MOVPE) on trench-patterned AlN templates. Similar 3D microfacet structures with different height are formed on top of and at the bottom of the AlN trench. Cathodoluminescence (CL) spectra are separately acquired at semipolar and (0001) facet QWs at room temperature (RT). The peak energies of {1 ̄101} facet QWs and (0001) facet QWs on higher 3D structures are 5.42 and 5.43 eV, respectively, while that of (0001) facet QWs on lower 3D structures is 5.23eV. Through structural analyses using transmission electron microscopy (TEM), the peak energy difference between the {1 ̄101} QWs and the lower (0001) QWs is ascribed mainly to suppressed internal electric fields in the {1 ̄101} facet QWs. Furthermore, Al spatial distribution causes the peak energy difference between the (0001) facet QWs.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ken Kataoka, Masanori Yamaguchi, Kensuke Fukushima, Mitsuru Funato, and Yoichi Kawakami "Multi-wavelength light emission from three-dimensional AlGaN quantum wells fabricated on facet structures", Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 898627 (8 March 2014); https://doi.org/10.1117/12.2037286
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Quantum wells

Aluminum nitride

Aluminum

Sapphire

Transmission electron microscopy

Scanning electron microscopy

Gallium nitride

RELATED CONTENT


Back to Top