Paper
8 March 2014 Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED
Ilya E. Titkov, Amit Yadav, Vera L Zerova, Modestas Zulonas, Andrey F. Tsatsulnikov, Wsevolod V. Lundin, Alexey V. Sakharov, Edik U. Rafailov
Author Affiliations +
Abstract
Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ilya E. Titkov, Amit Yadav, Vera L Zerova, Modestas Zulonas, Andrey F. Tsatsulnikov, Wsevolod V. Lundin, Alexey V. Sakharov, and Edik U. Rafailov "Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED", Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89862A (8 March 2014); https://doi.org/10.1117/12.2040086
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Light emitting diodes

Quantum wells

External quantum efficiency

Internal quantum efficiency

Temperature metrology

Electroluminescence

Gallium nitride

Back to Top