Electrical properties of ultrathin Ga-doped ZnO films on Si and ZnO

D. C. Look; B. Wang; K. D. Leedy; D. B. Thomson

doi:10.1117/12.2042567

8 March 2014 Electrical properties of ultrathin Ga-doped ZnO films on Si and ZnO

D. C. Look, B. Wang, K. D. Leedy, D. B. Thomson

Proceedings Volume 8987, Oxide-based Materials and Devices V; 898702 (2014) https://doi.org/10.1117/12.2042567
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Ga-doped ZnO films of thicknesses 3 – 500 nm were grown on either Si or ZnO at 200 °C by pulsedlaser deposition in 10 mTorr of Ar. Sheet carrier concentration n_s and mobility μ were measured at room temperature by the Hall effect and were fitted, respectively, to the equations n_s(d) = n(∞)(d - δd) and μ(d) = μ(∞)/[1 + d*/(d - δd)], where n is the volume carrier concentration at d = ∞ (the bulk value), δd is the thickness of the dead layer, μ(∞) is the mobility at d = ∞, and d* is a figure of merit for the electrical properties of the interface. Roughly, d* may be thought of as the minimum layer thickness that will produce good conductance. For GZO/Si, the fitted d* = 23 nm, and for GZO/ZnO, 3 nm. As evidence of the usefulness of d*, a 3-nm layer of GZO/Si showed no measurable conductance (since d << d*), whereas a 5-nm layer of GZO had excellent conductance (since d ≈ d*). In fact, the latter had a resistivity of about 4 × 10-4 Ω-cm at room temperature, possibly the lowest value ever reported in ZnO at this thickness.

Citation Download Citation

D. C. Look, B. Wang, K. D. Leedy, and D. B. Thomson "Electrical properties of ultrathin Ga-doped ZnO films on Si and ZnO", Proc. SPIE 8987, Oxide-based Materials and Devices V, 898702 (8 March 2014); https://doi.org/10.1117/12.2042567

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