High efficiency green light-emitting diodes based on InGaN-ZnGeN2 type-II quantum wells

Lu Han; Kathleen Kash; Hongping Zhao

doi:10.1117/12.2038756

27 February 2014 High-efficiency green light-emitting diodes based on InGaN-ZnGeN₂ type-II quantum wells

Lu Han, Kathleen Kash, Hongping Zhao

Proceedings Volume 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII; 90030W (2014) https://doi.org/10.1117/12.2038756
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Strain-compensated type-II InGaN-ZnGeN₂-AlGaN quantum wells (QWs) are studied as improved active regions for light-emitting diodes (LEDs). Both the band gap and the lattice parameters of ZnGeN2 are very close to those of GaN. The recently predicted large band offset between GaN and ZnGeN₂ allows the formation of a type-II heterostructure. The deep confinement of holes in the ZnGeN2 layer allows the use of a low In-content InGaN QW to extend the emission wavelength into the green wavelength region. A thin layer of AlGaN surrounding the QW is used as a strain compensation layer. Simulation studies of the proposed type-II QW indicate an enhancement of 5.6-6.8 times the spontaneous emission rate compared to InGaN-GaN QWs emitting in the green wavelength region.

Citation Download Citation

Lu Han, Kathleen Kash, and Hongping Zhao "High-efficiency green light-emitting diodes based on InGaN-ZnGeN₂ type-II quantum wells", Proc. SPIE 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, 90030W (27 February 2014); https://doi.org/10.1117/12.2038756

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