Paper
28 March 2014 Using chemo-epitaxial directed self-assembly for repair and frequency multiplication of EUVL contact-hole patterns
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Abstract
The patterning potential of block copolymer materials via various directed self-assembly (DSA) schemes has been demonstrated for over a decade. At cost-effective low printing doses, extreme ultra-violet lithography (EUVL) suffers from shot noise effects while patterning sub 30 nm contact hole dimensions. As the critical dimension (CD) of DSA systems is largely determined by polymer dimensions, it is theoretically expected that the local CD uniformity (LCDU) of EUVL pre-patterns can be improved by the DSA of pitch matched block co-polymers. In this work we demonstrate continued improvements on our previously reported chemo-epitaxy DSA integration flow. Also, we achieve dense arrays of contact holes via 3x and 4x frequency multiplication of EUVL patterned contact hole arrays.
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Arjun Singh, Boon Teik Chan, Yi Cao, Guanyang Lin, and Roel Gronheid "Using chemo-epitaxial directed self-assembly for repair and frequency multiplication of EUVL contact-hole patterns", Proc. SPIE 9049, Alternative Lithographic Technologies VI, 90492F (28 March 2014); https://doi.org/10.1117/12.2047285
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Cited by 4 scholarly publications and 3 patents.
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KEYWORDS
Extreme ultraviolet lithography

Directed self assembly

Optical lithography

Polymethylmethacrylate

Critical dimension metrology

Photoresist materials

Extreme ultraviolet

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