Paper
28 March 2014 A comparison of the pattern transfer of line-space patterns from graphoepitaxial and chemoepitaxial block co-polymer directed self-assembly
Dan B. Millward, Gurpreet S. Lugani, Ranjan Khurana, Scott L. Light, Ardavan Niroomand, Philip D. Hustad, Peter Trefonas, Shih-wei Chang, Christopher N. Lee, Dung Quach
Author Affiliations +
Abstract
Block co-polymer directed self-assembly (BCP DSA) has become an area of fervent research activity as a potential alternative or adjunct to EUV lithography or self-aligned pitch multiplication strategies. This presentation will evaluate two DSA strategies for patterning line-space arrays at 30nm pitch: graphoepitaxial DSA with surface-parallel cylinder BCPs and chemoepitaxial DSA with surface-normal lamellar BCPs. A comparison of pattern transfer into hard-mask and substrate films will be made by consideration of line and space CDs, line profile of cross-sectional SEM images, and comparison of relative LWR/SWR. The processes will be benchmarked against Micron’s process used in manufacturing its 16nm half-pitch NAND part.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dan B. Millward, Gurpreet S. Lugani, Ranjan Khurana, Scott L. Light, Ardavan Niroomand, Philip D. Hustad, Peter Trefonas, Shih-wei Chang, Christopher N. Lee, and Dung Quach "A comparison of the pattern transfer of line-space patterns from graphoepitaxial and chemoepitaxial block co-polymer directed self-assembly", Proc. SPIE 9054, Advanced Etch Technology for Nanopatterning III, 90540M (28 March 2014); https://doi.org/10.1117/12.2045580
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Cited by 8 scholarly publications.
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KEYWORDS
Etching

Scanning electron microscopy

Carbon

Semiconducting wafers

Directed self assembly

Dry etching

Inspection

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