Paper
24 June 2014 Vanadium oxide thin film with improved sheet resistance uniformity
Francis Généreux, Francis Provençal, Bruno Tremblay, Marc-André Boucher, Christian Julien, Christine Alain
Author Affiliations +
Abstract
This paper reports on the deposition of vanadium oxide thin films with sheet resistance uniformity better than 2.5% over a 150 mm wafer. The resistance uniformity within the array is estimated to be less than 1%, which is comparable with the value reported for amorphous silicon-based microbolometer arrays. In addition, this paper also shows that the resistivity of vanadium oxide, like amorphous silicon, can be modeled by Arrhenius' equation. This result is expected to significantly ease the computation of the correction table required for TEC-less operation of VOx-based microbolometer arrays.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Francis Généreux, Francis Provençal, Bruno Tremblay, Marc-André Boucher, Christian Julien, and Christine Alain "Vanadium oxide thin film with improved sheet resistance uniformity", Proc. SPIE 9070, Infrared Technology and Applications XL, 90701R (24 June 2014); https://doi.org/10.1117/12.2053465
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Cited by 1 scholarly publication.
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KEYWORDS
Resistance

Bridges

Oxides

Semiconducting wafers

Vanadium

Thin films

Microbolometers

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