A High Gain, Composite Nd:YVO4/SiC Thin Disk Amplifier

G. Alex Newburgh; Mark Dubinskii

doi:10.1117/12.2053751

9 June 2014 A High Gain, Composite Nd:YVO₄/SiC Thin Disk Amplifier

G. Alex Newburgh, Mark Dubinskii

Proceedings Volume 9081, Laser Technology for Defense and Security X; 908110 (2014) https://doi.org/10.1117/12.2053751
Event: SPIE Defense + Security, 2014, Baltimore, MD, United States

Abstract

We have demonstrated a new form of Nd:YVO₄ amplifier operating at 1064 nm based on a 800 µm thick Nd:YVO₄ gain layer bonded to a 4H-SiC prism. The amplifier was tested in the ‘master oscillator - power amplifier’ (MOPA) configuration, where both the seed source and the single pass amplifier were operated in a quasi-continuous wave (Q-CW) regime: pulse duration 500 µs, pulse repetition frequency (PRF) - 100 Hz. The Nd:YVO₄gain element was pumped by a 808 nm laser diode bar stack to amplify seed inputs in the power range of 1 to 55 W with a gains of 4 to 2.6, respectively, with 25% optical-to-optical extraction efficiency. The temperature distribution of the gain medium was measured under operational conditions using thermography.

Citation Download Citation

G. Alex Newburgh and Mark Dubinskii "A High Gain, Composite Nd:YVO₄/SiC Thin Disk Amplifier", Proc. SPIE 9081, Laser Technology for Defense and Security X, 908110 (9 June 2014); https://doi.org/10.1117/12.2053751

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