Heat Developable Resist For Multilayer Resist Technology

Alfred Steinmann

doi:10.1117/12.968296

1 January 1988 Heat Developable Resist For Multilayer Resist Technology

Alfred Steinmann

Proceedings Volume 0920, Advances in Resist Technology and Processing V; (1988) https://doi.org/10.1117/12.968296
Event: Santa Clara Symposium on Microlithography, 1988, Santa Clara, CA, United States

Abstract

A novel, positive working, silicon-containing resist was developed for use in multilayer resist technology. The complexity of multilayer systems could successfully be reduced due to the dry development behaviour of the resist. Besides, the resist shows very high sensitivity on exposure to deep-UV radiation. Using appropriate sensitizers, the resist is also highly sensitive to g-, h- and i-line exposure, thus making the application in todays optical lithography possible. Submicron resolution could easily be achieved. Thanks to the high silicon content, resist structures were truly transferred into a planarizer resin by reactive ion etching in an oxygen plasma.

Citation Download Citation

Alfred Steinmann "Heat Developable Resist For Multilayer Resist Technology", Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); https://doi.org/10.1117/12.968296

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