Realization of 10 GHz minus 30dB on-chip micro-optical links with Si-Ge RF bi-polar technology

Kingsley A. Ogudo; Lukas W. Snyman; Jean-Luc Polleux; Carlos Viana; Zerihun Tegegne

doi:10.1117/12.2064737

23 June 2014 Realization of 10 GHz minus 30dB on-chip micro-optical links with Si-Ge RF bi-polar technology

Kingsley A. Ogudo, Lukas W. Snyman, Jean-Luc Polleux, Carlos Viana, Zerihun Tegegne

Proceedings Volume 9257, Sensors, MEMS and Electro-Optical Systems; 92570I (2014) https://doi.org/10.1117/12.2064737
Event: Third Conference on Sensors, MEMS and Electro-Optic Systems, 2014, Skukuza, Kruger National Park, South Africa

Abstract

Si Avalanche based LEDs technology has been developed in the 650 -850nm wavelength regime [1, 2]. Correspondingly, small micro-dimensioned detectors with pW/μm² sensitivity have been developed for the same wavelength range utilizing Si-Ge detector technology with detection efficiencies of up to 0.85, and with a transition frequencies of up to 80 GHz [3] A series of on-chip optical links of 50 micron length, utilizing 650 – 850 nm propagation wavelength have been designed and realized, utilizing a Si Ge radio frequency bipolar process. Micron dimensioned optical sources, waveguides and detectors were all integrated on the same chip to form a complete optical link on-chip. Avalanche based Si LEDs (Si Av LEDs), Schottky contacting, TEOS densification strategies, silicon nitride based waveguides, and state of the art Si-Ge bipolar detector technologies were used as key design strategies. Best performances show optical coupling from source to detector of up to 10GHz and - 40dBm total optical link budget loss with a potential transition frequency coupling of up to 40GHz utilizing Si Ge based LEDs. The technology is particularly suitable for application as on-chip optical links, optical MEMS and MOEMS, as well as for optical interconnects utilizing low loss, side surface, waveguide- to-optical fiber coupling. Most particularly is one of our designed waveguide which have a good core axis alignment with the optical source and yield 10GHz -30dB on-chip micro-optical links as shown in Fig 9 (c). The technology as developed has been appropriately IP protected.

Citation Download Citation

Kingsley A. Ogudo, Lukas W. Snyman, Jean-Luc Polleux, Carlos Viana, and Zerihun Tegegne "Realization of 10 GHz minus 30dB on-chip micro-optical links with Si-Ge RF bi-polar technology", Proc. SPIE 9257, Sensors, MEMS and Electro-Optical Systems, 92570I (23 June 2014); https://doi.org/10.1117/12.2064737

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