Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters

Snežana Lazić; Ekaterina Chernysheva; Žarko Gačević; Noemi García-Lepetit; Herko P. van der Meulen; Marcus Müller; Frank Bertram; Peter Veit; Jürgen Christen; Almudena Torres-Pardo; José M. González Calbet; Enrique Calleja; José M. Calleja

doi:10.1117/12.2074898

13 March 2015 Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters

Snežana Lazić, Ekaterina Chernysheva, Žarko Gačević, Noemi García-Lepetit, Herko P. van der Meulen, Marcus Müller, Frank Bertram, Peter Veit, Jürgen Christen, Almudena Torres-Pardo, José M. González Calbet, Enrique Calleja, José M. Calleja

Author Affiliations +

Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93630U (2015) https://doi.org/10.1117/12.2074898
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We demonstrate single-photon emission from two-dimensional ordered arrays of GaN nanowires containing InGaN nanodisks. The structures were fabricated by molecular beam epitaxy on (0001) GaN-on-sapphire templates patterned with nanohole masks prepared by colloidal lithography. Low-temperature cathodoluminescence measurements reveal the spatial distribution of light emitted from a single nanowire heterostructure. The emission originating from the topmost part of the InGaN regions covers the blue-to-green spectral range and shows intense and narrow quantum dot-like photoluminescence lines. These lines exhibit an average linear polarization ratio of 92%. Photon correlation measurements show photon antibunching with a g⁽²⁾(0) values well below the 0.5 threshold for single photon emission. The antibunching rate increases linearly with the optical excitation power, extrapolating to the exciton decay rate of ~1 ns^-1 at vanishing pump power. This value is comparable with the exciton lifetime measured by time-resolved photoluminescence. Fast and efficient single photon emitters with controlled spatial position and strong linear polarization are an important step towards high-speed on-chip quantum information management.

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Snežana Lazić, Ekaterina Chernysheva, Žarko Gačević, Noemi García-Lepetit, Herko P. van der Meulen, Marcus Müller, Frank Bertram, Peter Veit, Jürgen Christen, Almudena Torres-Pardo, José M. González Calbet, Enrique Calleja, and José M. Calleja "Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93630U (13 March 2015); https://doi.org/10.1117/12.2074898

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