Present and future of GaN power devices and their applications

Daisuke Ueda

doi:10.1117/12.2076351

13 March 2015 Present and future of GaN power devices and their applications

Daisuke Ueda

Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 936310 (2015) https://doi.org/10.1117/12.2076351
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

This paper reviews the status quo of several GaN-based power devices. By using unique polarized heterostructure of GaN/AlGaN materials, NSJ (Natural Super Junction) diode was proposed to break through the trade-off between the blocking voltage and the on-resistance. Normally-off GaN-based device was realized by GIT (Gate Injection Transistor) structure, where p-type AlGaN hole-injector are provided as a gate reducing the on-resistance by conductivity modulation. Experimentally fabricated inverter system using GaN GIT achieved the world-highest conversion efficiency over 99.3%. Further, by combining the microwave performance and power handling capability of of GaN-based devices, we developed Drive-by-Microwave (DbM) technology as a DC-isolated gate driver for GaN power switch. This is a fusion of microwave and power devices for the first time using GaN-based materials

Citation Download Citation

Daisuke Ueda "Present and future of GaN power devices and their applications", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 936310 (13 March 2015); https://doi.org/10.1117/12.2076351

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