Si based GeSn light emitter: mid-infrared devices in Si photonics

S. Q. Yu; S. A. Ghetmiri; W. Du; J. Margetis; Y. Zhou; Aboozar Mosleh; S. Al-Kabi; A. Nazzal; G. Sun; Richard A. Soref; J. Tolle; B. Li; H. A. Naseem

doi:10.1117/12.2077778

27 February 2015 Si based GeSn light emitter: mid-infrared devices in Si photonics

S. Q. Yu, S. A. Ghetmiri, W. Du, J. Margetis, Y. Zhou, Aboozar Mosleh, S. Al-Kabi, A. Nazzal, G. Sun, Richard A. Soref, J. Tolle, B. Li, H. A. Naseem

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Proceedings Volume 9367, Silicon Photonics X; 93670R (2015) https://doi.org/10.1117/12.2077778
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

Ge_1-xSn_x/Ge thin films and Ge/Ge_1-xSn_x/Ge n-i-p double heterostructure (DHS) have been grown using commercially available reduced pressure chemical vapor deposition (RPCVD) reactor. The Sn compositional material and optical characteristics have been investigated. A direct bandgap GeSn material has been identified with Sn composition of 10%. The GeSn DHS samples were fabricated into LED devices. Room temperature electroluminescence spectra were studied. A maximum emission power of 28mW was obtained with 10% Sn LED under the injection current density of 800 A/cm².

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S. Q. Yu, S. A. Ghetmiri, W. Du, J. Margetis, Y. Zhou, Aboozar Mosleh, S. Al-Kabi, A. Nazzal, G. Sun, Richard A. Soref, J. Tolle, B. Li, and H. A. Naseem "Si based GeSn light emitter: mid-infrared devices in Si photonics", Proc. SPIE 9367, Silicon Photonics X, 93670R (27 February 2015); https://doi.org/10.1117/12.2077778

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