Photoluminescence quenching of InP/ZnS quantum dots by charge injection

Martin Möbius; Xiangyu Ma; Jörg Martin; Matthew F. Doty; Thomas Otto; Thomas Gessner

doi:10.1117/12.2185047

10 March 2015 Photoluminescence quenching of InP/ZnS quantum dots by charge injection

Martin Möbius, Xiangyu Ma, Jörg Martin, Matthew F. Doty, Thomas Otto, Thomas Gessner

Proceedings Volume 9370, Quantum Sensing and Nanophotonic Devices XII; 93701X (2015) https://doi.org/10.1117/12.2185047
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

Rising efforts concerning the reduction of CO₂ emission promote the use of fiber reinforced plastics, e.g. in automotive or aircraft engineering due to their low mass compared to classical materials. Although fiber reinforced plastics have critical properties such as low mass and high stiffness compared to classical materials, they also may suffer unpredictable failures due to hidden structural damage. Thus structural health monitoring is vital for the development of modern lightweight structures. Our concept of material integrated sensor technology is based on a combination of a piezoelectric foil with a quantum dot polymer composite. By application of a mechanical (over-) load, electrical charges are generated and injected into the nanocrystals causing PL quenching, which is detectable as local optical contrast. A very efficient charge injection is crucial for sensitive load detection, because of limited amount of generated charges and transport losses. Consequently we have investigated the charge injection and charge storage properties of various types of quantum dots, in particular core shell types CdSe/ZnS and InP/ZnS, embedded in semi-conducting poly(9-vinylcarbazole) (PVK). PL quenching was realized by application of external voltages smaller than 20 V. Initial results indicated a longer charge storage time in InP/ZnS quantum dots, which we attribute to a difference in band level alignment between valence band levels of respective quantum dots and PVK.

Citation Download Citation

Martin Möbius, Xiangyu Ma, Jörg Martin, Matthew F. Doty, Thomas Otto, and Thomas Gessner "Photoluminescence quenching of InP/ZnS quantum dots by charge injection", Proc. SPIE 9370, Quantum Sensing and Nanophotonic Devices XII, 93701X (10 March 2015); https://doi.org/10.1117/12.2185047

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