Electron-Hole-Phonon Coupling In Semiconductor Quantum Wells

W. Cai; T. F. Zheng; M. C. Marchetti; M. Lax

doi:10.1117/12.947225

22 August 1988 Electron-Hole-Phonon Coupling In Semiconductor Quantum Wells

W. Cai, T. F. Zheng, M. C. Marchetti, M. Lax

Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947225
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

We study the transport of the photoexcited quasi-2D electron-hole (e-h) plasma in a p-doped semiconductor quantum well, where electrons are a minority. Using the drifted temperature model for both electrons and holes and introducing a coordinate transformation to the center-of-mass system, separately, for electrons and holes, we obtain a set of coupled equations for the drift velocities and the temperatures of electrons and holes. We show that negative absolute mobility for minority electrons occurs at low temperature and under a weak electric field due to the electron-hole drag. In a strong electric field and at room bath temperature, our results show that the electrons are heated much more than the holes. The electron mobility is smaller in the presence of the hole plasma than in the absence of holes. These results are in agreement with experiments.

Citation Download Citation

W. Cai, T. F. Zheng, M. C. Marchetti, and M. Lax "Electron-Hole-Phonon Coupling In Semiconductor Quantum Wells", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); https://doi.org/10.1117/12.947225

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