Paper
16 March 2015 A method of image-based aberration metrology for EUVL tools
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Abstract
We present an approach to image-based EUV aberration metrology using binary mask targets and iterative model-based solutions to extract both the amplitude and phase components of the aberrated pupil function. The approach is enabled through previously developed modeling, fitting, and extraction algorithms. We examine the flexibility and criticality of the method using two experimental case studies. The first extracts the pupil phase behavior from an ASML NXE:3100 exposure system and shows primary aberration sensitivity below 0.2 mλ. The second experiment extracts both components of the pupil function from the SHARP EUV microscope.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zac Levinson, Sudharshanan Raghunathan, Erik Verduijn, Obert Wood II, Pawitter Mangat, Kenneth Goldberg, Markus Benk, Antoine Wojdyla, Vicky Philipsen, Eric Hendrickx, and Bruce W. Smith "A method of image-based aberration metrology for EUVL tools", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 942215 (16 March 2015); https://doi.org/10.1117/12.2087177
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Cited by 3 scholarly publications.
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KEYWORDS
Monochromatic aberrations

Imaging systems

Wavefronts

Extreme ultraviolet

Extreme ultraviolet lithography

Metrology

Photomasks

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