13nm EUV free electron lasers for next generation photolithography: the critical importance of RF stability

Simon Keens; Bodo Fritsche; Carmen Hiltbrunner; Marcel Frei

doi:10.1117/12.2181069

13 March 2015 13nm EUV free electron lasers for next generation photolithography: the critical importance of RF stability

Simon Keens, Bodo Fritsche, Carmen Hiltbrunner, Marcel Frei

Author Affiliations +

Proceedings Volume 9422, Extreme Ultraviolet (EUV) Lithography VI; 94222Q (2015) https://doi.org/10.1117/12.2181069
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

A Free Electron Laser (FEL) is a highly coherent, highly collimated light source capable of creating extremely high power beams of precisely controlled wavelengths. The semiconductor industry is currently examining these as sources extreme ultraviolet (EUV) light for photolithography applications. An important factor to achieve high quality FEL emission is the careful development of the amplifying RF system as a complete integrated unit, considering each component as part of the amplification chain to maximise RF stability and FEL beam quality. In this paper we review methods to optimise RF amplifier systems without compromising on output stability, compare solid-state with tube based technologies, and discuss the state-of-the-art in RF amplifier technology, highlighting recent case studies. We conclude by examining the benefits of integrated systems and highlight the solutions offered by available technologies to a range of technological challenges, in order to design and build the best possible systems with maximum possible efficiency for the demanding requirements of the semiconductor industry.

Citation Download Citation

Simon Keens, Bodo Fritsche, Carmen Hiltbrunner, and Marcel Frei "13nm EUV free electron lasers for next generation photolithography: the critical importance of RF stability", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94222Q (13 March 2015); https://doi.org/10.1117/12.2181069

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