Paper
19 March 2015 Overlay target selection for 20-nm process on A500 LCM
Vidya Ramanathan, Lokesh Subramany, Tal Itzkovich, Karsten Gutjhar, Patrick Snow, Chanseob Cho, Lipkong Yap
Author Affiliations +
Abstract
Persistently shrinking design rules and increasing process complexity require tight overlay control thereby making it imperative to choose the most suitable overlay measurement technique and complementary target design. In this paper we describe an assessment of various target designs from FEOL to BEOL on 20-nm process. Both scatterometry and imaging based methodology were reviewed for several key layers on A500LCM tool, which enables the use of both technologies. Different sets of targets were carefully designed and printed, taking into consideration the process and optical properties of each layer. The optimal overlay target for a given layer was chosen based on its measurement performance.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vidya Ramanathan, Lokesh Subramany, Tal Itzkovich, Karsten Gutjhar, Patrick Snow, Chanseob Cho, and Lipkong Yap "Overlay target selection for 20-nm process on A500 LCM", Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 942424 (19 March 2015); https://doi.org/10.1117/12.2086016
Lens.org Logo
CITATIONS
Cited by 1 patent.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Overlay metrology

Semiconducting wafers

Back end of line

Etching

Scatterometry

Diffractive optical elements

Metrology

Back to Top