Computer Simulations Of The Role Of Surface Reconstruction, Stoichiometry And Strain In Molecular Beam Epitaxical Growth And Defect Formation

S. V. Ghaisas; A. Madhukar

doi:10.1117/12.947348

15 August 1988 Computer Simulations Of The Role Of Surface Reconstruction, Stoichiometry And Strain In Molecular Beam Epitaxical Growth And Defect Formation

S. V. Ghaisas, A. Madhukar

Author Affiliations +

Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988) https://doi.org/10.1117/12.947348
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

The influence of the lattice mismatch strain on the growth mode and formation of defects is examined via computer simulations. Striking differences in the growth mode are suggested for compressive versus tensile strain in the overlayer. It is proposed and shown that the genesis of misfit induced defects is laid in the initial stages of growth at the coalescence boundaries of kinetically controlled clusters exceeding a critical size needed for epitaxical registry.

Citation Download Citation

S. V. Ghaisas and A. Madhukar "Computer Simulations Of The Role Of Surface Reconstruction, Stoichiometry And Strain In Molecular Beam Epitaxical Growth And Defect Formation", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); https://doi.org/10.1117/12.947348

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