Formation of fast neutral beams and their using for selective etching

Yu. P. Maishev; S. L. Shevchuk; V. P. Kudrya

doi:10.1117/12.2180434

18 December 2014 Formation of fast neutral beams and their using for selective etching

Yu. P. Maishev, S. L. Shevchuk, V. P. Kudrya

Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 94400K (2014) https://doi.org/10.1117/12.2180434
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation

Abstract

Design and main characteristics of high performance fast neutral beam sources based on the ion sources with a cold cathode and a closed drift of electrons in crossed electrical and magnetic fields are described. The output beam is of practically 100% neutrality and has a low level of divergence (<5º) which provides long distance transportation of neutral beams. Etching results for Si, SiO₂, W, NbN, TiN, and TiC with using the working gases Ar, C_F4, C3F₈, and SF₆are given. Preliminary results for the build-in charge decreasing effect for the Si/SiO₂ interface under a neutral beam treatment are presented.

Citation Download Citation

Yu. P. Maishev, S. L. Shevchuk, and V. P. Kudrya "Formation of fast neutral beams and their using for selective etching", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 94400K (18 December 2014); https://doi.org/10.1117/12.2180434

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