CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 9481 > Article
Paper
13 May 2015 Studies on abrupt and gradual band gap hole barriers in InAs/GaSb superlattice long wavelength photodetectors
Yi Zhou, Jianxin Chen, Fangfang Wang, Zhicheng Xu, Zhizhong Bai, Chuan Jin, Li He
Author Affiliations +
Proceedings Volume 9481, Image Sensing Technologies: Materials, Devices, Systems, and Applications II; 94810V (2015) https://doi.org/10.1117/12.2179742
Event: SPIE Sensing Technology + Applications, 2015, Baltimore, MD, United States
Abstract
The barrier enhanced InAs/GaSb long wavelength photodetectors were proved to have better performance. Our previous work showed a PBIN detector with an electron barrier inserted show significantly improved electrical performances compared to a PIN structure. To improve the quantum efficiency, Be-doping was employed to convert the conductivity of the long wavelength SL structure, the PN junction moves away from the B-I hetrostructure to the π-N interface which loses the barrier effect. Therefore, the hole barrier was needed to form a PBπBN structure. In this paper, both the abrupt and gradual hole barrier was designed without Al element to form a PBπBN structure. The gradual hole barrier was optimized to avoid the blocking of photo generated current, maximized the quantum efficiency. The RmaxA product of the PBπBN detector was measured to be 77 Ωcm2 and the dark current density under -0.05V bias was measured to be 8.8×10-4A/cm2 at 80K. The quantum efficiency of gradual hole barrier detector was measured to be 27.2% at 10.6 μm and the quantum efficiency was slowly decreased under reverse bias. The result shows the gradual hole barrier efficiently eliminate the peak barrier in the electron band. The peak detectivity of this graded detector is calculated to be 9.46×1010cm.Hz1/2.W-1 at 10.6 μm.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Yi Zhou, Jianxin Chen, Fangfang Wang, Zhicheng Xu, Zhizhong Bai, Chuan Jin, and Li He "Studies on abrupt and gradual band gap hole barriers in InAs/GaSb superlattice long wavelength photodetectors", Proc. SPIE 9481, Image Sensing Technologies: Materials, Devices, Systems, and Applications II, 94810V (13 May 2015); https://doi.org/10.1117/12.2179742
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 6 PAGES
DOWNLOAD PAPER SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Sensors
Gallium antimonide
Quantum efficiency
Superlattices
Stereolithography
Photodetectors
Structural design
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top