Paper
2 September 2015 State-of-the-art cryogenic CTE measurements of ultra-low thermal expansion materials
Thomas Middelmann, Alexander Walkov, René Schödel
Author Affiliations +
Abstract
The accurate characterization of material properties as thermal expansion, temporal length drift and relaxation is essential for semiconductor industry or for aerospace applications. PTB’s absolute length measuring Ultra Precision Interferometer enables investigation of these properties with high accuracy in the temperature range from 7 K to about 300 K. The Coefficient of Thermal Expansion (CTE) can be measured with uncertainties mainly below 3 × 10-9/K. In this paper we give an overview about the latest state of our experimental setup and evaluation methods. Recent measurement results on silicon carbide ceramics (SiC-100, HB-Cesic), silicon nitride ceramics (SN-PG and SN-Pu) and single crystal silicon (SCS), the latter being the reference material of choice in this regime, are presented.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas Middelmann, Alexander Walkov, and René Schödel "State-of-the-art cryogenic CTE measurements of ultra-low thermal expansion materials", Proc. SPIE 9574, Material Technologies and Applications to Optics, Structures, Components, and Sub-Systems II, 95740N (2 September 2015); https://doi.org/10.1117/12.2187928
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Cited by 5 scholarly publications.
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KEYWORDS
Temperature metrology

Silicon carbide

Silicon

Cryogenics

Ceramics

Beam splitters

Crystals

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