Paper
23 October 2015 Evaluation of multilayer defect repair viability and protection techniques for EUV masks
Takeshi Isogawa, Kazunori Seki, Mark Lawliss, Zhengqing John Qi, Jed Rankin, Shinji Akima
Author Affiliations +
Abstract
A variety of repairs on EUV multilayer were conducted including protection against pattern degradation in manufactural use in order to evaluate feasibility of multilayer repair and the protection schemes. The efficacy of post-repair protection techniques are evaluated to determine the lifetime of multilayer repairs. Simulations were used to select the optimal material thicknesses for repair protection, and the simulation results are verified with the lithographic results. The results showed a high correlation coefficient. Finally, all repaired sites were cleaned multiple times to quantify repair durability and impact on wafer CD. Aerial imaging of the repair sites before and after cleans shows a dramatic degradation of wafer CD post-cleaning. However, we show that applying a surface protection material after multilayer repair successfully mitigates the influence of multilayer degradation during extensive manufacturing operations.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takeshi Isogawa, Kazunori Seki, Mark Lawliss, Zhengqing John Qi, Jed Rankin, and Shinji Akima "Evaluation of multilayer defect repair viability and protection techniques for EUV masks", Proc. SPIE 9635, Photomask Technology 2015, 963518 (23 October 2015); https://doi.org/10.1117/12.2197761
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Critical dimension metrology

Extreme ultraviolet

Semiconducting wafers

Multilayers

Manufacturing

Microscopes

Back to Top