Surface modification on GaAs by in-situ pulsed UV laser

Xiaoxiang Guo; Dayun Huo; Wei Zhang; Chao Xu; Changwei Deng; Changsi Peng

doi:10.1117/12.2242704

25 October 2016 Surface modification on GaAs by in-situ pulsed UV laser

Xiaoxiang Guo, Dayun Huo, Wei Zhang, Chao Xu, Changwei Deng, Changsi Peng

Proceedings Volume 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices; 96860P (2016) https://doi.org/10.1117/12.2242704
Event: Eighth International Symposium on Advanced Optical Manufacturing and Testing Technology (AOMATT2016), 2016, Suzhou, China

Abstract

A single-beam of UV pulse laser (355nm/10ns) was used to irradiate the as-grown GaAs (100) surface in-situ in molecular beam epitaxy with pulse numbers from 1 to 6 at laser intensity of 52.5 mJ/cm²/pulse. It was observed that the irradiated GaAs surface morphology depended strongly on the pulse number. For single pulse irradiation, small nano-dots (NDs) with high density were produced on the surface. The size of NDs increased and nano-rings (NRs) were observed with the increasing of pulse numbers. The surface was completely dominated by NRs at 6 pulses of laser irradiating. Arsenic atoms were selectively desorbed away from GaAs surface by laser irradiation leaving plenty of naked Ga-atoms to form small metal-dots of Gallium. Ga-rich NDs transferred to Ga droplets with the increased number of the laser pulses. NRs formed just as the traditional droplet-epitaxy process when the droplet size grew up to a critical size. Nano-drill process played an important role in the process. This research was supposed to provide a novel and promising solution for more controllable nano-fabrication of various semiconductor materials of MBE growing, including but not limited to GaAs reported here.

Citation Download Citation

Xiaoxiang Guo, Dayun Huo, Wei Zhang, Chao Xu, Changwei Deng, and Changsi Peng "Surface modification on GaAs by in-situ pulsed UV laser", Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 96860P (25 October 2016); https://doi.org/10.1117/12.2242704

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KEYWORDS

Gallium arsenide

Gallium

Neodymium

Chemical species

Pulsed laser operation

Laser irradiation

Ultraviolet radiation

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