Paper
26 February 2016 Wurtzite/zinc-blende electronic-band alignment in basal-plane stacking faults in semi-polar GaN
Author Affiliations +
Abstract
Heteroepitaxial semipolar and nonpolar GaN layers often suffer from high densities of extended defects including basal plane stacking faults (BSFs). BSFs which are considered as inclusions of cubic zinc-blende phase in wurtzite matrix act as quantum wells strongly affecting device performance. Band alignment in BSFs has been discussed as type of band alignment at the wurtzite/zinc blende interface governs the response in differential transmission; fast decay after the pulse followed by slow recovery due to spatial splitting of electrons and heavy holes for type- II band alignment in contrast to decay with no recovery in case of type I band alignment. Based on the results, band alignment is demonstrated to be of type II in zinc-blende segments in wurtzite matrix as in BSFs.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Morteza Monavarian, Shopan Hafiz, Natalia Izyumskaya, Saikat Das, Ümit Özgür, Hadis Morkoç, and Vitaliy Avrutin "Wurtzite/zinc-blende electronic-band alignment in basal-plane stacking faults in semi-polar GaN ", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974827 (26 February 2016); https://doi.org/10.1117/12.2213859
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Gallium nitride

Picosecond phenomena

Interfaces

Quantum wells

Electrons

Laser beam diagnostics

Scanning transmission electron microscopy

Back to Top