100W EUV light-source key component technology update for HVM

Tsukasa Hori; Yasufumi Kawasuji; Hiroshi Tanaka; Yukio Watanabe; Yutaka Shiraishi; Tamotsu Abe; Takeshi Okamoto; Takeshi Kodama; Hiroaki Nakarai; Taku Yamazaki; Shinji Okazaki; Takashi Saitou; Hakaru Mizoguchi

doi:10.1117/12.2217947

18 March 2016 100W EUV light-source key component technology update for HVM

Tsukasa Hori, Yasufumi Kawasuji, Hiroshi Tanaka, Yukio Watanabe, Yutaka Shiraishi, Tamotsu Abe, Takeshi Okamoto, Takeshi Kodama, Hiroaki Nakarai, Taku Yamazaki, Shinji Okazaki, Takashi Saitou, Hakaru Mizoguchi

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Proceedings Volume 9776, Extreme Ultraviolet (EUV) Lithography VII; 977625 (2016) https://doi.org/10.1117/12.2217947
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

Gigaphoton Inc. develops a high-power laser produced plasma extreme ultraviolet (LPP EUV) light source for high volume manufacturing which enables sub-10nm critical layer patterning for semiconductor device fabrication. A technology update of key components of a 100 W LPP-EUV light source is given in this paper. The key components efficiently produce a stable plasma and evacuate the tin debris from the EUV vessel with a magnetic debris mitigation system. The chosen technology guarantees therefore a high-power and long-life EUV light source system. Each component is described with updated data. The latest system performance results are also presented. They were obtained from our proto LPP-EUV light systems which support 100 W output power.

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Tsukasa Hori, Yasufumi Kawasuji, Hiroshi Tanaka, Yukio Watanabe, Yutaka Shiraishi, Tamotsu Abe, Takeshi Okamoto, Takeshi Kodama, Hiroaki Nakarai, Taku Yamazaki, Shinji Okazaki, Takashi Saitou, and Hakaru Mizoguchi "100W EUV light-source key component technology update for HVM", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 977625 (18 March 2016); https://doi.org/10.1117/12.2217947

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