EUV resist outgassing analysis for the new platform resists at EIDEC

Eishi Shiobara; Yukiko Kikuchi; Shinji Mikami; Takeshi Sasami; Takashi Kamizono; Shinya Minegishi; Takakazu Kimoto; Toru Fujimori; Takeo Watanabe; Tetsuo Harada; Hiroo Kinoshita; Satoshi Tanaka

doi:10.1117/12.2219424

18 March 2016 EUV resist outgassing analysis for the new platform resists at EIDEC

Eishi Shiobara, Yukiko Kikuchi, Shinji Mikami, Takeshi Sasami, Takashi Kamizono, Shinya Minegishi, Takakazu Kimoto, Toru Fujimori, Takeo Watanabe, Tetsuo Harada, Hiroo Kinoshita, Satoshi Tanaka

Author Affiliations +

Proceedings Volume 9776, Extreme Ultraviolet (EUV) Lithography VII; 97762H (2016) https://doi.org/10.1117/12.2219424
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

The suppression of outgassing from the EUV resist is one of the significant challenges, which has to be addressed for realizing EUV lithography (EUVL). The outgassing might be the main contributor involved in the contamination of the mirror optics in scanners. This may result in reflectivity losses. The pragmatic outgassing test that utilizes the witness sample (WS) was used as a general method to quantify the outgassing level for commercially available chemically amplified resists (CAR). There are two types of contaminations. The first type of contamination involves a cleanable contamination that mainly comprises hydrocarbons that can be removed by the hydrogen radical cleaning. Another type of contamination includes the noncleanable contamination that remains on the WS even after hydrogen radical cleaning. Several outgas qualification results were evaluated at the EIDEC [1, 2]. The data indicated that contaminations by the CAR mainly comprised the cleanable contaminations. The data also indicated that there were almost negligible noncleanable contaminations from the CAR. EUV resist communities accelerate the development of high sensitivity resists to compensate the low power of the EUV source. Nonchemically amplified resist (nonCAR) with a new platform is a candidate for high sensitivity resists. The nonCAR includes some types of metal elements with high absorbance for EUV light. There is very limited research on the outgassing characteristics of the nonCAR. In this study, we considered an EUV exposure process in the actual EUV scanner and EUV resists were exposed in a hydrogen environment. A potential risk could result from the reaction of the hydrogen radicals generated by the EUV light with the metal elements in the nonCAR and the metal hydride outgases from the resist. This would result in a noncleanable contamination on the EUV mirror [3]. The knowledge with respect to outgassing from an organic metal complex is insufficient even in a vacuum condition. Hence, the study involved the preparation of certain types of organic metal complexes as model materials. Then, the outgassing evaluations for the materials were carried out as a fundamental studies in a vacuum condition. The results were reported in this study.

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Eishi Shiobara, Yukiko Kikuchi, Shinji Mikami, Takeshi Sasami, Takashi Kamizono, Shinya Minegishi, Takakazu Kimoto, Toru Fujimori, Takeo Watanabe, Tetsuo Harada, Hiroo Kinoshita, and Satoshi Tanaka "EUV resist outgassing analysis for the new platform resists at EIDEC", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97762H (18 March 2016); https://doi.org/10.1117/12.2219424

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