Hidden refresh scheme for dual-port gain cell eDRAM

Wen Wang; Hongshi Sang; Xubang Shen

doi:10.1117/12.2205735

17 December 2015 Hidden refresh scheme for dual-port gain cell eDRAM

Wen Wang, Hongshi Sang, Xubang Shen

Proceedings Volume 9811, MIPPR 2015: Multispectral Image Acquisition, Processing, and Analysis; 98110U (2015) https://doi.org/10.1117/12.2205735
Event: Ninth International Symposium on Multispectral Image Processing and Pattern Recognition (MIPPR2015), 2015, Enshi, China

Abstract

In recent years, the gain cell based eDRAM has got more and more interest for high density and logic-compatible embedded memories. It is widely used in image processing and biomedical applications as it can work as a dual-port memory with a small area. A hidden refresh scheme is proposed for the dual-port gain cell eDRAM to avoid the conflict between accesses and internal refreshes and to increase the data efficiency. By dividing the read, write and refresh operations into several stages, a hidden refresh controller controls to perform the dual-port access and internal refresh in parallel without any conflict. The hidden refresh scheme is integrated into a dual-port gain cell eDRAM of 256X256 in SMIC 130nm logic process. Simulation results demonstrate that the external accesses are performed without delay and dual-port data availability can reach 100%. And the access cycle time is only increased by about 10.9% compared with traditional distribution refresh method. The refresh power of the eDRAM is about 60μW/Mbit at 85°C.

Citation Download Citation

Wen Wang, Hongshi Sang, and Xubang Shen "Hidden refresh scheme for dual-port gain cell eDRAM", Proc. SPIE 9811, MIPPR 2015: Multispectral Image Acquisition, Processing, and Analysis, 98110U (17 December 2015); https://doi.org/10.1117/12.2205735

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KEYWORDS

Control systems

Clocks

Transistors

Logic

Image processing

Amplifiers

Data storage

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