Paper
13 May 2016 Numerical approaches for predicting two-photon absorption induced single-event effects in semiconductors
Joel M. Hales, Ani Khachatrian, Nicolas J.-H. Roche, Stephen Buchner, Jeffrey Warner, Dale McMorrow
Author Affiliations +
Abstract
Two numerical approaches for determining the charge generated in semiconductors via two-photon absorption (2PA) under conditions relevant for laser-based single-event effects (SEE) experiments are presented. The first approach uses a simple analytical expression incorporating a small number of experimental/material parameters while the second approach employs a comprehensive beam propagation method that accounts for all the complex nonlinear optical (NLO) interactions present. The impact of the excitation conditions, device geometry, and specific NLO interactions on the resulting collected charge in silicon devices is also discussed. These approaches can provide value to the radiation-effects community by predicting the impacts that varying experimental parameters will have on 2PA SEE measurements.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joel M. Hales, Ani Khachatrian, Nicolas J.-H. Roche, Stephen Buchner, Jeffrey Warner, and Dale McMorrow "Numerical approaches for predicting two-photon absorption induced single-event effects in semiconductors", Proc. SPIE 9835, Ultrafast Bandgap Photonics, 98350B (13 May 2016); https://doi.org/10.1117/12.2223847
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Nonlinear optics

Silicon

Beam propagation method

Absorption

Cadmium

Semiconductors

Semiconducting wafers

RELATED CONTENT


Back to Top