Optical Stark effect in 2D semiconductors

Edbert J. Sie; James W. McIver; Yi-Hsien Lee; Liang Fu; Jing Kong; Nuh Gedik

doi:10.1117/12.2223462

13 May 2016 Optical Stark effect in 2D semiconductors

Edbert J. Sie, James W. McIver, Yi-Hsien Lee, Liang Fu, Jing Kong, Nuh Gedik

Proceedings Volume 9835, Ultrafast Bandgap Photonics; 983518 (2016) https://doi.org/10.1117/12.2223462
Event: SPIE Defense + Security, 2016, Baltimore, MD, United States

Abstract

Semiconductors that are atomically thin can exhibit novel optical properties beyond those encountered in the bulk compounds. Monolayer transition-metal dichalcogenides (TMDs) are leading examples of such semiconductors that possess remarkable optical properties. They obey unique selection rules where light with different circular polarization can be used for selective photoexcitation at two different valleys in the momentum space. These valleys constitute bandgaps that are normally locked in the same energy. Selectively varying their energies is of great interest for applications because it unlocks the potential to control valley degree of freedom, and offers a new promising way to carry information in next-generation valleytronics. In this proceeding paper, we show that the energy gaps at the two valleys can be shifted relative to each other by means of the optical Stark effect in a controllable valley-selective manner. We discuss the physics of the optical Stark effect, and we describe the mechanism that leads to its valleyselectivity in monolayer TMD tungsten disulfide (WS₂).

Citation Download Citation

Edbert J. Sie, James W. McIver, Yi-Hsien Lee, Liang Fu, Jing Kong, and Nuh Gedik "Optical Stark effect in 2D semiconductors", Proc. SPIE 9835, Ultrafast Bandgap Photonics, 983518 (13 May 2016); https://doi.org/10.1117/12.2223462

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