Paper
27 April 2016 First orientation-patterned GaSb ridge waveguides fabrication and preliminary characterization for frequency conversion in the mid-infrared
S. Roux, L. Cerutti, E. Tournié, M. Garcia, B. Gérard, G. Patriarche, A. Grisard
Author Affiliations +
Abstract
We report the first realization of low-loss orientation-patterned gallium antimonide waveguides for frequency conversion in the mid-infrared. Planar waveguide structures were grown by molecular-beam epitaxy on periodically patterned gallium arsenide templates prepared by wafer bonding. Ridge waveguides were designed and fabricated from the planar structures. Record losses of 0.73 dB/cm in periodically oriented waveguides were measured at 2 μm.
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S. Roux, L. Cerutti, E. Tournié, M. Garcia, B. Gérard, G. Patriarche, and A. Grisard "First orientation-patterned GaSb ridge waveguides fabrication and preliminary characterization for frequency conversion in the mid-infrared", Proc. SPIE 9894, Nonlinear Optics and its Applications IV, 989415 (27 April 2016); https://doi.org/10.1117/12.2225441
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KEYWORDS
Waveguides

Gallium arsenide

Gallium arsenide

Gallium antimonide

Mid-IR

Wafer bonding

Wafer bonding

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