An Inversion Channel Technology For Opto-Electronic Integration

G. W. Taylor; D. L. Crawford; P. A. Kiely; P. Cooke; S. Sargood; A. Izabelle; T. Y. Chang; B. Tell; M. S. Lebby; K. Brown-Goebeler

doi:10.1117/12.960136

9 February 1989 An Inversion Channel Technology For Opto-Electronic Integration

G. W. Taylor, D. L. Crawford, P. A. Kiely, P. Cooke, S. Sargood, A. Izabelle, T. Y. Chang, B. Tell, M. S. Lebby, K. Brown-Goebeler

Author Affiliations +

Proceedings Volume 0994, Optoelectronic Materials, Devices, Packaging, and Interconnects II; (1989) https://doi.org/10.1117/12.960136
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States

Abstract

A new approach to optoelectronic integration is reported which combines electronic and optical devices fabricated with a common sequence and a single MBE wafer growth. The devices have in common, an inversion layer structure produced by charge sheet doping.

Citation Download Citation

G. W. Taylor, D. L. Crawford, P. A. Kiely, P. Cooke, S. Sargood, A. Izabelle, T. Y. Chang, B. Tell, M. S. Lebby, and K. Brown-Goebeler "An Inversion Channel Technology For Opto-Electronic Integration", Proc. SPIE 0994, Optoelectronic Materials, Devices, Packaging, and Interconnects II, (9 February 1989); https://doi.org/10.1117/12.960136

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