Modeling a multilevel boost converter using SiC components for PV application

Ayoob S. Alateeq; Yasser A. Almalaq; Mohammad A. Matin

doi:10.1117/12.2238932

19 September 2016 Modeling a multilevel boost converter using SiC components for PV application

Ayoob S. Alateeq, Yasser A. Almalaq, Mohammad A. Matin

Proceedings Volume 9957, Wide Bandgap Power Devices and Applications; 99570J (2016) https://doi.org/10.1117/12.2238932
Event: SPIE Optical Engineering + Applications, 2016, San Diego, California, United States

Abstract

This paper discusses a DC-DC multilevel boost with wide bandgap components for PV applications. In the PV system, the multilevel boost converter is advisable to be used over the conventional boost converter because of the high ratio conversion. The multilevel boost converter is designed with one inductor, 2N-1 silicon carbide (SiC) schottky diodes, 2N-1 capacitors and one SiC MOSFET where N is the number of levels. Inserting SiC components in the design helps to maintain the temperature effect that could cause a high power loss. Most function of using a multilevel boost converter is to produce a high output voltage without using either a power transformer or a coupled inductor. Achieving a high gain output in the multilevel boost converter depends on the level of the converter and the switching duty cycle. The demonstrated design is a multilevel boost converter supplies from 220 V to rate 2 KW power. The switching frequency is 100 KHz and the output voltage of 4-level is 3.5 KV. Several values of temperatures are applicable to the system and the effect of changing the temperature on efficiency is studied. The developed design is simulated by using a LTspice software and the results are discussed.

Citation Download Citation

Ayoob S. Alateeq, Yasser A. Almalaq, and Mohammad A. Matin "Modeling a multilevel boost converter using SiC components for PV application", Proc. SPIE 9957, Wide Bandgap Power Devices and Applications, 99570J (19 September 2016); https://doi.org/10.1117/12.2238932

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