Paper
18 May 2016 The measurement capabilities of cross-sectional profile of Nanoimprint template pattern using small angle x-ray scattering
Eiji Yamanaka, Rikiya Taniguchi, Masamitsu Itoh, Kazuhiko Omote, Yoshiyasu Ito, Kiyoshi Ogata, Naoya Hayashi
Author Affiliations +
Abstract
Nanoimprint lithography (NIL) is one of the most potential candidates for the next generation lithography for semiconductor. It will achieve the lithography with high resolution and low cost. High resolution of NIL will be determined by a high definition template. Nanoimprint lithography will faithfully transfer the pattern of NIL template to the wafer. Cross-sectional profile of the template pattern will greatly affect the resist profile on the wafer. Therefore, the management of the cross-sectional profile is essential. Grazing incidence small angle x-ray scattering (GI-SAXS) technique has been proposed as one of the method for measuring cross-sectional profile of periodic nanostructure pattern. Incident x-rays are irradiated to the sample surface with very low glancing angle. It is close to the critical angle of the total reflection of the x-ray. The scattered x-rays from the surface structure are detected on a two-dimensional detector. The observed intensity is discrete in the horizontal (2θ) direction. It is due to the periodicity of the structure, and diffraction is observed only when the diffraction condition is satisfied. In the vertical (β) direction, the diffraction intensity pattern shows interference fringes reflected to height and shape of the structure. Features of the measurement using x-ray are that the optical constant for the materials are well known, and it is possible to calculate a specific diffraction intensity pattern based on a certain model of the cross-sectional profile. The surface structure is estimated by to collate the calculated diffraction intensity pattern that sequentially while changing the model parameters with the measured diffraction intensity pattern. Furthermore, GI-SAXS technique can be measured an object in a non-destructive. It suggests the potential to be an effective tool for product quality assurance. We have developed a cross-sectional profile measurement of quartz template pattern using GI-SAXS technique. In this report, we will report the measurement capabilities of GI-SAXS technique as a cross-sectional profile measurement tool of NIL quartz template pattern.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eiji Yamanaka, Rikiya Taniguchi, Masamitsu Itoh, Kazuhiko Omote, Yoshiyasu Ito, Kiyoshi Ogata, and Naoya Hayashi "The measurement capabilities of cross-sectional profile of Nanoimprint template pattern using small angle x-ray scattering", Proc. SPIE 9984, Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 99840V (18 May 2016); https://doi.org/10.1117/12.2246570
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Cited by 3 scholarly publications.
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KEYWORDS
Diffraction

Nanoimprint lithography

Quartz

X-rays

Transmission electron microscopy

Scattering

Semiconducting wafers

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