High-brightness InGaN-based red microLEDs exceeding 1 mW/mm2

Zhe Zhuang; Daisuke Iida; Martin Velazquez-Rizo; Kazuhiro Ohkawa

doi:10.1117/12.2609794

7 March 2022 High-brightness InGaN-based red microLEDs exceeding 1 mW/mm²

Zhe Zhuang, Daisuke Iida, Martin Velazquez-Rizo, Kazuhiro Ohkawa

Proceedings Volume PC12022, Light-Emitting Devices, Materials, and Applications XXVI; PC1202213 (2022) https://doi.org/10.1117/12.2609794
Event: SPIE OPTO, 2022, San Francisco, California, United States

Conference Poster

Abstract

We demonstrated the 630-nm peak wavelength InGaN-based micro-LED arrays at a high current density up to 50 A/cm2. The device dimension was 17 × 17 µm2. The micro-LEDs obtained a high light output power density of 1.76 mW/mm2 at 50 A/cm2, which is much higher than AlInGaP-based micro-LEDs (20 × 20 µm2). The on-wafer EQE was 0.18%. We also individually fabricated the blue and green micro-LED arrays, the color gamut of RGB micro-LED arrays covered as high as 81.3% of the Rec. 2020 color space in CIE 1931.

Citation Download Citation

Zhe Zhuang, Daisuke Iida, Martin Velazquez-Rizo, and Kazuhiro Ohkawa "High-brightness InGaN-based red microLEDs exceeding 1 mW/mm²", Proc. SPIE PC12022, Light-Emitting Devices, Materials, and Applications XXVI, PC1202213 (7 March 2022); https://doi.org/10.1117/12.2609794

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