Presentation
11 November 2022 Full size EUV pellicle development for high power
Author Affiliations +
Abstract
Extreme ultraviolet lithography (EUVL) has been receiving considerable attention in the semiconductor industry for mass-produce high-resolution patterns of 10 nm or lower. In high volume manufacturing (HVM), the pellicle is an essential component to protect an expensive photomask from contamination of particles so that cost and yield of EUVL can be improved. As the EUVL has been dramatically developed, the pellicle has to be a very thin enough to transmit EUV light and has to withstand above 400W power. In addition, it must have the hydrogen radical durability for long pellicle lifetime. In this work, a full size (110×144 mm2) pellicle is manufactured as shown in Fig.1. The pellicle composited of the several layers has above 90% transmittance and processes 10K wafers at more than 400W power. The change of pellicle components before and after EUV exposure is evaluated by Rutherford backscattering spectroscopy (RBS). Furthermore, advanced pellicle with 92% transmittance and above 600W of power is under developing.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Juhee Hong, Haena Lee, Yesong Kim, Donghoi Kim, Munsu Choi, Seungjo Lee, Byeong Sung Yu, Chulkyun Park, Min Wook Jung, Chang Hoon Lee, Byoung Hoon Seung, and Cheol Shin "Full size EUV pellicle development for high power", Proc. SPIE PC12292, International Conference on Extreme Ultraviolet Lithography 2022, PC122920E (11 November 2022); https://doi.org/10.1117/12.2641755
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KEYWORDS
Pellicles

Extreme ultraviolet

Extreme ultraviolet lithography

Transmittance

Particles

Photomasks

Semiconducting wafers

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