Formation and characterization of Ti-Vacancy complex in AlN as a candidate for qubit

Pegah Bagheri; Ronny Kirste; Pramod Reddy; Seiji Mita; Ramon Collazo; Zlatko Sitar

doi:10.1117/12.2644867

17 March 2023 Formation and characterization of Ti-Vacancy complex in AlN as a candidate for qubit

Pegah Bagheri, Ronny Kirste, Pramod Reddy, Seiji Mita, Ramon Collazo, Zlatko Sitar

Proceedings Volume PC12430, Quantum Sensing and Nano Electronics and Photonics XIX; PC124300Z (2023) https://doi.org/10.1117/12.2644867
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

There is an increasing demand in the realization of new color centers in ultrawide bandgap semiconductors with ability to operate at room temperature for the quantum computation. AlN with bandgap of 6.2 eV and availability of mature growth techniques and controllable doping seems to be a suitable host for many deep color centers as a candidate for qubit such as (Ti_Al-V_N)^0. However, stabilization of this defect configuration with certain charge state requires defect engineering in AlN. In this work, formation of Ti-V complex was enhanced by introducing nitrogen vacancy supersaturation through Ti implantation. Kinetics of Ti-Vacancy complex formation was studied by annealing the implanted samples at various temperatures. Furthermore, the structural and optical properties of these color centers were investigated via STEM and micro-PL measurement. This work opens up pathway for realization of any color centers in semiconductors as a candidate for qubit.

Conference Presentation

Citation Download Citation

Pegah Bagheri, Ronny Kirste, Pramod Reddy, Seiji Mita, Ramon Collazo, and Zlatko Sitar "Formation and characterization of Ti-Vacancy complex in AlN as a candidate for qubit", Proc. SPIE PC12430, Quantum Sensing and Nano Electronics and Photonics XIX, PC124300Z (17 March 2023); https://doi.org/10.1117/12.2644867

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