Laser gettering of GaAs

Yaroslav V. Bobitski; Zenon Y. Gotra; Dmitro Korbutjak

doi:10.1117/12.130991

1 August 1992 Laser gettering of GaAs

Yaroslav V. Bobitski, Zenon Y. Gotra, Dmitro Korbutjak

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.130991
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

A method of impurity laser gettering applicable to complex semiconductors of the CdTe type is suggested and investigated. The methods of photoluminescence and structural analysis revealed the efficiency of laser recrystallization of a semiconductor plate non-operating area which further serves as the getter zone. The mode of laser radiation from the self-absorption area, which leads to priority evaporation of a more volatile component in the complex semiconductor, forms a stable zone of mechanical stresses which in further heat treatment serves as an efficient run-off for undesired impurities and dot defects.

Citation Download Citation

Yaroslav V. Bobitski, Zenon Y. Gotra, and Dmitro Korbutjak "Laser gettering of GaAs", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.130991

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