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Proceedings Article

Reactive ion etching of deep trenches in silicon

[+] Author Affiliations
Vladimir N. Bliznetsov, Oleg P. Gutshin, V. Yachmenev

Scientific Research Institute of Molecular Electronics and Pilot P (Russia)

Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, 584 (August 1, 1992); doi:10.1117/12.130992
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From Conference Volume 1783

  • International Conference of Microelectronics: Microelectronics '92
  • Andrzej Sowinski; Jan Grzybowski; Witold T. Kucharski; Ryszard S. Romaniuk
  • Warsaw, Poland | September 21, 1992

abstract

We have developed a new production technology of deep trenches RIE with a photoresist mask. RIE was performed in a low-pressure batch diode reactor. Wafers were placed on RF (5,28 MHz) electrode covered by organic lacquer. The maximum loading was 24 wafers having a diameter of 100 mm. Positive photoresist with 2 micron thickness was used for masking without any thermal treatment after development. The line width was 1.5 - 2.0 micron. Because earlier investigated mixtures of chlorine and bromine-containing halocarbons with SF6 didn't allow sufficient selectivity silicon/photoresist, we have proposed to use for deep silicon etching the mixture of CF3I/SF6 and investigated the dependence of silicon and photoresist etch rates and etch anisotropy on basic controlled plasma parameters.

© (1992) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Vladimir N. Bliznetsov ; Oleg P. Gutshin and V. Yachmenev
"Reactive ion etching of deep trenches in silicon", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, 584 (August 1, 1992); doi:10.1117/12.130992; http://dx.doi.org/10.1117/12.130992


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