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Proceedings Article

High-aspect-ratio trench etching

[+] Author Affiliations
James A. Bondur, Ruth E. Bucknall, Fritz Redeker, Jim Su

Applied Materials, Inc. (USA)

Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, 45 (April 16, 1993); doi:10.1117/12.142936
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From Conference Volume 1803

  • Advanced Techniques for Integrated Circuit Processing II
  • James A. Bondur; Gary Castleman; Lloyd R. Harriott; Terry R. Turner
  • San Jose, CA | September 20, 1992

abstract

A high aspect ratio (> 15:1), sub-micron, deep capacitor trench process is demonstrated in an 8 inch Applied Materials P5000E magnetically enhanced reactive ion etcher (MERIE) using HBr/NF3/He-O2 chemistry. Through the insertion of ferro-magnetic sheet material into the pedestal, sub-micron trenches can be etched to depths greater than 10 micrometers , with etch rates > 6000 angstroms/min, uniformity < +/- 5%, profile uniformity 89 +/- 0.5 degree(s) and selectivity to oxide > 40:1. The importance of the wafer surface temperature on trench etch properties is established. Studies indicate that there is a threshold temperature below which the chosen recipe would need to be modified to produce satisfactory trenches.

© (1993) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

James A. Bondur ; Ruth E. Bucknall ; Fritz Redeker and Jim Su
"High-aspect-ratio trench etching", Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, 45 (April 16, 1993); doi:10.1117/12.142936; http://dx.doi.org/10.1117/12.142936


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