Absorption and damage thresholds of low-defect-density hafnia deposited with activated oxygen

Robert Chow; Steven Falabella; Gary E. Loomis; Frank Rainer; Christopher J. Stolz; Mark R. Kozlowski

doi:10.1117/12.147409

24 June 1993 Absorption and damage thresholds of low-defect-density hafnia deposited with activated oxygen

Robert Chow, Steven Falabella, Gary E. Loomis, Frank Rainer, Christopher J. Stolz, Mark R. Kozlowski

Proceedings Volume 1848, 24th Annual Boulder Damage Symposium Proceedings -- Laser-Induced Damage in Optical Materials: 1992; (1993) https://doi.org/10.1117/12.147409
Event: Optical Materials for High Power Lasers, 1992, Boulder, CO, United States

Abstract

Motivation for this work included observations at Lawrence Livermore National Laboratory and elsewhere of a correlation between increasing laser damage thresholds (DT) and both decreasing nodular-defect density and absorption of coatings. We reduced the nodular-defect densities by a factor of over 4x in hafnia (HfO₂) coatings deposited by reactive e-beam evaporation from a Hf target source. In order to increase the metal oxidation kinetics at the coated surface, Hf was e-beam deposited reactively with O₂ activated by a (mu) -wave discharge. The effect of using activated O₂ during the evaporation of a HfO₂ target source was also evaluated. A series of HfO₂ layers were made with various conditions; we alternated between two (mu) -wave configurations, Hf and HfO₂ targets and two reactive O₂ pressures. Laser DTs (1064 nm - 10 ns pulses), absorption (at 511 nm), and nodular- defect densities from these coatings are reported. The DT correlated inversely with the coating absorption.

Citation Download Citation

Robert Chow, Steven Falabella, Gary E. Loomis, Frank Rainer, Christopher J. Stolz, and Mark R. Kozlowski "Absorption and damage thresholds of low-defect-density hafnia deposited with activated oxygen", Proc. SPIE 1848, 24th Annual Boulder Damage Symposium Proceedings -- Laser-Induced Damage in Optical Materials: 1992, (24 June 1993); https://doi.org/10.1117/12.147409

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