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Proceedings Article

Growth of high-quality single crystals of KYF4 by TSSG method

[+] Author Affiliations
Bruce H. T. Chai, J. Lefaucheur, Anh-Tuyet Pham, G. B. Loutts

CREOL/Univ. of Central Florida (USA)

John F. Nicholls

CREOL/Univ. of Central Florida (United Kingdom)

Proc. SPIE 1863, Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals II, 131 (July 21, 1993); doi:10.1117/12.149271
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From Conference Volume 1863

  • Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals II
  • Bruce H. T. Chai
  • Los Angeles, CA | January 17, 1993

abstract

We report for the first time the growth of large size high quality single crystals of KYF4 (KYF) by TSSG method using the conventional weight-feed-back automatic diameter control Czochralski puller. We have made major revision of the KF-YF3 phase diagram and showed that KYF melts peritectically. The crystals can accommodate large size variations of the dopants. We were able to dope it with a large number of rare earth elements. The crystal has long fluorescence lifetime and weak phonon energy making it ideal as upconversion laser host.

© (1993) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Bruce H. T. Chai ; J. Lefaucheur ; Anh-Tuyet Pham ; G. B. Loutts and John F. Nicholls
"Growth of high-quality single crystals of KYF4 by TSSG method", Proc. SPIE 1863, Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals II, 131 (July 21, 1993); doi:10.1117/12.149271; http://dx.doi.org/10.1117/12.149271


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