Role of SOG and oxynitride passivation in the field inversion of CMOS circuits

Said Ghneim; Jim Fulford

doi:10.1117/12.221442

22 September 1995 Role of SOG and oxynitride passivation in the field inversion of CMOS circuits

Said Ghneim, Jim Fulford

Proceedings Volume 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis; (1995) https://doi.org/10.1117/12.221442
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

N-channel field inversion leakage in multi-level-metal CMOS precesses is one of the adverse effects of back-end-of-line (BEOL) processing. In particular, using certain combinations of nitride passivation films, Spin-On-Glass (SOG), and TEOS planarization was shown to be very detrimental to the stability of CMOS circuits because of the induced leakage under field oxides. This work reports on a new field inversion leakage that is totally due to silicon oxynitride passivation. The SOG film used to planarize the inter-metal dielectric (IMD) layers did not have a significant role in the field inversion leakage as we were able to induce and suppress the leakage currents by only controlling the oxynitride passivation deposition conditions (with and without the SOG). In particular it is shown that a high oxynitride deposition temperature induces sever parasitic leakage currents while a low deposition temperature diminished the leakage.

Citation Download Citation

Said Ghneim and Jim Fulford "Role of SOG and oxynitride passivation in the field inversion of CMOS circuits", Proc. SPIE 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, (22 September 1995); https://doi.org/10.1117/12.221442

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