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Proceedings Article

Comparative study of submicron gap filling and planarization techniques

[+] Author Affiliations
Adriana E. Hass Bar-Ilan, N. Gutmann

Tower Semiconductor Ltd. (Israel)

Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, 277 (September 15, 1995); doi:10.1117/12.221142
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From Conference Volume 2636

  • Microelectronic Device and Multilevel Interconnection Technology
  • Ih-Chin Chen; Girish A. Dixit; Trung T. Doan; Nobuo Sasaki
  • Austin, TX, United States | October 25, 1995

abstract

As submicron devices continue to shrink, causing increased aspect ratios, gap filling in intermetal dielectric (IMD) becomes more difficult. At the time, global planarization becomes essential to meet the depth of focus budget for photolithography. The paper compares different techniques: Plasma Enhanced-CVD (PECVD) TEOS dep-etch-dep, CVD ozone-TEOS (both subatmospheric and atmospheric), FlowfillTM (a novel CVD process that uses a silane and hydrogen peroxide chemistry). Gap filling, planarity (local and global) and device performance comparisons are presented. It is concluded that use of the FlowfillTM, as part of a layer called 'Advanced Planarization Layer' (APL), will save costly planarization steps, while maintaining sort yield and device performance.

© (1995) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Adriana E. Hass Bar-Ilan and N. Gutmann
"Comparative study of submicron gap filling and planarization techniques", Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, 277 (September 15, 1995); doi:10.1117/12.221142; http://dx.doi.org/10.1117/12.221142


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