Advanced silicon etching using high-density plasmas

Jy K. Bhardwaj; Huma Ashraf

doi:10.1117/12.221279

19 September 1995 Advanced silicon etching using high-density plasmas

Jy K. Bhardwaj, Huma Ashraf

Proceedings Volume 2639, Micromachining and Microfabrication Process Technology; (1995) https://doi.org/10.1117/12.221279
Event: Micromachining and Microfabrication, 1995, Austin, TX, United States

Abstract

High density plasmas are beginning to dominate the market for advanced anisotropic silicon etching for MEMS applications. This paper looks at the reasons behind this dominance for high etch rate, deep anisotropic etching. A discussion of anisotropic etch mechanisms highlights the need for sidewall passivation to meet these requirements. Results are presented of a novel room temperature advanced silicon etch process: >= 2 micrometers /min; >= 70:1 selectivity to resist (and >= 150:1 to oxide); up to 30:1 aspect ratio; 500 micrometers depth capability; using a non-toxic, non-corrosive environmentally acceptable fluorine-based chemistry.

Citation Download Citation

Jy K. Bhardwaj and Huma Ashraf "Advanced silicon etching using high-density plasmas", Proc. SPIE 2639, Micromachining and Microfabrication Process Technology, (19 September 1995); https://doi.org/10.1117/12.221279

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