Fabrication and characterization of the Pd-silicided emitters for field-emission devices

Chih-Chong Wang; Tze-Kun Ku; Ming Shiann Feng; Iing-Jar Hsieh; Huang-Chung Cheng

doi:10.1117/12.220936

13 September 1995 Fabrication and characterization of the Pd-silicided emitters for field-emission devices

Chih-Chong Wang, Tze-Kun Ku, Ming Shiann Feng, Iing-Jar Hsieh, Huang-Chung Cheng

Proceedings Volume 2641, Microelectronic Structures and Microelectromechanical Devices for Optical Processing and Multimedia Applications; (1995) https://doi.org/10.1117/12.220936
Event: Micromachining and Microfabrication, 1995, Austin, TX, United States

Abstract

The structure of Pd-silicided field emitters based on the silicon micromachining technology has been demonstrated. The uniform and extremely sharp silicided emitters are formed using wet chemical etching, low-temperature oxidation sharpening, coating metal and furnace annealing in N₂ ambient. The sheet resistance and Auger electron spectroscope results depict the transformation of silicidation. Transmission electron microscope of bright-field, dark-field, and diffraction pattern show the formation of silicided emitters. These emitters have potential applications in vacuum microelectronics to obtain superior lifetime, relaibility, and stability.

Citation Download Citation

Chih-Chong Wang, Tze-Kun Ku, Ming Shiann Feng, Iing-Jar Hsieh, and Huang-Chung Cheng "Fabrication and characterization of the Pd-silicided emitters for field-emission devices", Proc. SPIE 2641, Microelectronic Structures and Microelectromechanical Devices for Optical Processing and Multimedia Applications, (13 September 1995); https://doi.org/10.1117/12.220936

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