Experimental evidence of the Coulomb interaction effects in CdS1-xSex quantum dots

G. Ventruti; L. Baldassarre; M. Lugara; Vincenzo Spagnolo; Gaetano Scamarcio; Michele Ferrara; Annalisa Convertino; Ida Marie Catalano; Giancarlo C. Righini

doi:10.1117/12.226220

3 November 1995 Experimental evidence of the Coulomb interaction effects in CdS_1-xSe_x quantum dots

G. Ventruti, L. Baldassarre, M. Lugara, Vincenzo Spagnolo, Gaetano Scamarcio, Michele Ferrara, Annalisa Convertino, Ida Marie Catalano, Giancarlo C. Righini

Author Affiliations +

Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226220
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine

Abstract

Photoacoustic and photoluminescence studies on CdS_1-xSe_x nanocrystals grown in a transparent borosilicate glass matrix are reported. Our analysis points out the important role played by the Coulomb interaction in quantum dots whose radii range around the exciton Bohr radius: (1) strong polar coupling to the lattice; (2) observation of optical transitions with different radial quantum numbers in photoacoustic spectra. Photoacoustic spectroscopy has allowed the direct observation of several low and high index states. The experimental results have been shown to be in good agreement with the effective mass- approximation calculations in which the strain effects, due to the hydrostatic compression of the glass matrix on semiconductor nanocrystals, and size dependent dielectric constant have been taken into account.

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G. Ventruti, L. Baldassarre, M. Lugara, Vincenzo Spagnolo, Gaetano Scamarcio, Michele Ferrara, Annalisa Convertino, Ida Marie Catalano, and Giancarlo C. Righini "Experimental evidence of the Coulomb interaction effects in CdS_1-xSe_x quantum dots", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226220

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