Paper
10 April 1996 High-power diode lasers based on InGaAsP spacer and waveguide layers with AlGaAs cladding layers
Goetz Erbert, Frank Bugge, Arne Knauer, Juergen Sebastian, Klaus Vogel, Marcus Weyers
Author Affiliations +
Abstract
Broad-area stripe laser diodes based on GaAs and Al-free spacer and Al-free spacer and waveguide layers were studied and compared to conventional AlGaAs-laser diodes. The structures were grown by low pressure MOVPE (metal organic vapor phase epitaxy). For the active region InGaAs-single quantum wells with an emission wavelength of 915 nm were used. Threshold current density, internal loss and internal efficiency are comparable for the three structures under study. The use of a quaternary spacer layer instead of GaAs improves the performance for laser diodes with a low divergence ((Theta) perpendicular equals 20 degree(s) FWHM). Using a non-optimized facet coating procedure about 1.2 W cw output power at a vertical divergence of (Theta) perpendicular equals 26.5 degree(s) are obtained from a 50 micrometers wide stripe laser with Al-free waveguides.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Goetz Erbert, Frank Bugge, Arne Knauer, Juergen Sebastian, Klaus Vogel, and Marcus Weyers "High-power diode lasers based on InGaAsP spacer and waveguide layers with AlGaAs cladding layers", Proc. SPIE 2683, Fabrication, Testing, and Reliability of Semiconductor Lasers, (10 April 1996); https://doi.org/10.1117/12.237684
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconductor lasers

Waveguides

Semiconducting wafers

Gallium arsenide

Cladding

Diodes

Quantum wells

Back to Top