Paper
10 June 1996 Dependence of the photoelectron spectral function on hole doping in Nd1-xSrxTiO3
S. W. Robey, V. E. Henrich, C. Eylem, B. W. Eichhorn
Author Affiliations +
Abstract
Photoelectron spectroscopy was employed to follow the development of the Ti 3d spectral intensity within approximately 3 eV of the Fermi level (EF) in Nd1-xSrxTiO3 as a function of x. The total intensity in this region is found to correlate linearly with composition as the nominal Ti valence is varied from plus 3 to plus 4. Changes in the spectral structure in this binding energy region are discussed in terms of the one-electron spectral function. For x less than 0.25, (semiconducting compositions) only incoherent intensity associated with the lower Hubbard band is present. Additional intensity, attributed to a coherent quasiparticle contribution, appears at the composition of the metal-insulator transition, x approximately 0.25. The relative intensities of these two components are determined as a function of x, and connections with theoretical models and experimental results on related systems are discussed.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. W. Robey, V. E. Henrich, C. Eylem, and B. W. Eichhorn "Dependence of the photoelectron spectral function on hole doping in Nd1-xSrxTiO3", Proc. SPIE 2696, Spectroscopic Studies of Superconductors, (10 June 1996); https://doi.org/10.1117/12.241782
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KEYWORDS
Transition metals

Doping

Strontium

Photoemission spectroscopy

Photons

Quasiparticles

Semiconductors

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