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Proceedings Article

UV-laser investigation of dielectric thin films

[+] Author Affiliations
K. Ettrich, Holger Blaschke, Eberhard Welsch

Friedrich-Schiller-Univ. Jena (Germany)

Peter Thomsen-Schmidt, Dieter Schaefer

Berliner Institut fuer Optik GmbH (Germany)

Proc. SPIE 2714, 27th Annual Boulder Damage Symposium: Laser-Induced Damage in Optical Materials: 1995, 426 (May 27, 1996); doi:10.1117/12.240407
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From Conference Volume 2714

  • 27th Annual Boulder Damage Symposium: Laser-Induced Damage in Optical Materials: 1995
  • Harold E. Bennett; Arthur H. Guenther; Mark R. Kozlowski; Brian E. Newnam; M. J. Soileau
  • Boulder, CO | October 30, 1995

abstract

Utilizing thermal Mirage technique, UV laser damage resistivity studies on LaF3/MgF2, Al2O3/SiO2, and HfO2/SiO2 multilayer stacks have been performed at (lambda) equals 248 nm, (tau) equals 20 ns. Investigating these stacks by changing the number of (HL) pairs and the substrate material, optical and thermal coating properties were shown to be responsible for UV single-shot laser damage. Similarly, the damage threshold of selected samples is to be influenced by the deposition technique. Furthermore, multishot damage measurements on LaF3/MgF2 high-reflecting multilayer coatings reveal the accumulation of laser energy in the predamage range.

© (1996) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

K. Ettrich ; Holger Blaschke ; Eberhard Welsch ; Peter Thomsen-Schmidt and Dieter Schaefer
"UV-laser investigation of dielectric thin films", Proc. SPIE 2714, 27th Annual Boulder Damage Symposium: Laser-Induced Damage in Optical Materials: 1995, 426 (May 27, 1996); doi:10.1117/12.240407; http://dx.doi.org/10.1117/12.240407


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